Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B10C2+x:Hy) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (��) that incorporates changes of the electrical properties for both the a-B10C2+x:Hy film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (��). Samples were then irradiated with 200 keV He+ ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B10C2+x:Hy and irradiated silicon. Additionally, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range

Fiber-optic refractometer based on a phase-shifted fiber Bragg grating on a side-hole fiber

A fiber-optic refractive index (RI) sensor based on a π-phaseshifted fiber-Bragg-grating (πFBG) inscribed on a side-hole fiber is presented. The reflection spectrum of the πFBG features two narrow notches associated with the two polarization modes and the spectral spacing of the notches is used for high-sensitivity RI sensing with little temperature cross-sensitivity. The side-hole fiber maintains its outer diameter and mechanical strength. The side-hole fiber is also naturally integrated into a microfluidic system for convenient sample delivery and reduced sample amount. A novel demodulation method based on laser frequency modulation to enhance the sensor dynamic range is proposed and demonstrated

Non-vacuum Preparation of wse2 Thin Films via the Selenization of Hydrated Tungsten Oxide Prepared using Chemical Solution Methods

It is known that tungsten oxide may be reacted with selenium sources to form WSe2 but literature reports include processing steps that involve high temperatures, reducing atmospheres, and/or oxidative pre-treatments of tungsten oxide. In this work, we report a non-vacuum process for the fabrication of compositionally high quality WSe2 thin films via the selenization of tungsten oxide under milder conditions. Tungsten source materials were various hydrated WO3 and WO2.9 compounds that were prepared using chemical solution techniques. Resulting films were selenized using a two-stage heating profile (250 °C for 15 minutes and 550 °C for 30 minutes) under a static argon atmosphere. Effects of the starting tungsten oxide phase on WSe2 formation after single and double selenization cycles were investigated using Raman spectroscopy and X-ray diffraction (XRD). After two selenization cycles, hydrated WO3 was converted to (002)-oriented WSe2 that exhibits well-resolved peaks for E12g and A1g phonon modes. Only a single selenization cycle was required to convert amorphous WO2.9 to WSe2. All selenizations in this work were achieved in non-reducing atmospheres and at lower temperatures and shorter times than any non-laser-assisted processes reported for WO3-to-WSe2 conversions

Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques

WO3 thin films were grown by atomic layer deposition and spectroscopic ellipsometry data gathered in the photon energy range of 0.72-8.5 eV and from multiple samples was utilized to determine the frequency dependent complex-valued isotropic dielectric function for WO3. We employ a critical-point model dielectric function analysis and determine a parameterized set of oscillators and compare the observed critical-point contributions with the vertical transition energy distribution found within the band structure of WO3 calculated by density functional theory. We investigate surface roughness with atomic force microscopy and compare to ellipsometric determined effective roughness layer thickness

Self assembled nanoparticle aggregates from line focused femtosecond laser ablation

In this paper we present the use of a line focused femtosecond laser beam that is rastered across a 2024 T3 aluminum surface to produce nanoparticles that self assemble into 5-60 micron diameter domed and in some cases sphere-shaped aggregate structures. Each time the laser is rastered over initial aggregates their diameter increases as new layers of nanoparticles self assemble on the surface. The aggregates are thus composed of layers of particles forming discrete layered shells inside of them. When micron size aggregates are removed, using an ultrasonic bath, rings are revealed that have been permanently formed in the sample surface. These rings appear underneath, and extend beyond the physical boundary of the aggregates. The surface is blackened by the formation of these structures and exhibits high light absorption

Non-vacuum Preparation of wse2 Thin Films via the Selenization of Hydrated Tungsten Oxide Prepared using Chemical Solution Methods

It is known that tungsten oxide may be reacted with selenium sources to form WSe2 but literature reports include processing steps that involve high temperatures, reducing atmospheres, and/or oxidative pre-treatments of tungsten oxide. In this work, we report a non-vacuum process for the fabrication of compositionally high quality WSe2 thin films via the selenization of tungsten oxide under milder conditions. Tungsten source materials were various hydrated WO3 and WO2.9 compounds that were prepared using chemical solution techniques. Resulting films were selenized using a two-stage heating profile (250 oC for 15 minutes and 550 oC for 30 minutes) under a static argon atmosphere. Effects of the starting tungsten oxide phase on WSe2 formation after single and double selenization cycles were investigated using Raman spectroscopy and X-ray diffraction (XRD). After two selenization cycles, hydrated WO3 was converted to (002)-oriented WSe2 that exhibits well-resolved peaks for E12g and A1g phonon modes. Only a single selenization cycle was required to convert amorphous WO2.9 to WSe2. All selenizations in this work were achieved in non-reducing atmospheres and at lower temperatures and shorter times than any non-laser-assisted processes reported for WO3-to-WSe2 conversions

Formation of aggregated nanoparticle spheres through femtosecond laser surface processing

A detailed structural and chemical analysis of a class of self-organized surface structures, termed aggregated nanoparticle spheres (AN-spheres), created using femtosecond laser surface processing (FLSP) on silicon, silicon carbide, and aluminum is reported in this paper. AN-spheres are spherical microstructures that are 20–100 μm in diameter and are composed entirely of nanoparticles produced during femtosecond laser ablation of material. AN-spheres have an onion-like layered morphology resulting from the build-up of nanoparticle layers over multiple passes of the laser beam. The material properties and chemical composition of the AN-spheres are presented in this paper based on scanning electron microscopy (SEM), focused ion beam (FIB) milling, transmission electron microscopy (TEM), and energy dispersive x-ray spectroscopy (EDX) analysis. There is a distinct difference in the density of nanoparticles between concentric rings of the onion-like morphology of the AN-sphere. Layers of high-density form when the laser sinters nanoparticles together and low-density layers form when nanoparticles redeposit while the laser ablates areas surrounding the AN-sphere. The dynamic nature of femtosecond laser ablation creates a variety of nanoparticles that make-up the AN-spheres including Si/C core-shell, nanoparticles that directly fragmented from the base material, nanoparticles with carbon shells that retarded oxidation, and amorphous, fully oxidized nanoparticles

Relationship between photofixed condensate, effluent and bulk composition of several common RTV materials

Raman spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy are employed to analyze the bulk compositions of five kinds of Room Temperature Vulcanized (RTV) silicones (CV2568, RTV566, DC93-500, SCV2590 and SCV2590-2) that are commonly employed in orbiting spacecraft. It is found that polydimethylsiloxane (PDMS), silicon dioxide, Tetra-n-propylsilicate (NPS), silicic acid, tetraethyl orthosilicate, and trimethylsilanol are contained in all of them. The outgassing products from those silicones are characterized by FTIR. By comparing the position of the peaks, it is found that the outgassing products of each material are PDMS and NPS which are consistent with the compositions of samples determined with Raman and FTIR respectively. These results indicate that the composition analysis of bulk or thin film silicones with Raman and FTIR could be used as the guideline to predict the outgassing products of silicones. This in turn can lead to a more global approach for determining photofixing issues associated with outgassing. In support of this, the photofixed films from pure PDMS, NPS, and their mixtures were analyzed by spectroscopic ellipsometry and their optical constants were determined

Improved \u3ci\u3ea\u3c/i\u3e-B\u3csub\u3e10\u3c/sub\u3eC\u3csub\u3e2+x\u3c/sub\u3eH\u3csub\u3ey\u3c/sub\u3e/Si p-n heterojunction performance after neutron irradiation

The impact of neutron irradiation, in the energy range of ~0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7×108 to 1.08×109 neutrons/cm2